IDB09E60_07 Datasheet, PDF (3/8 Pages) Infineon Technologies AG – Fast Switching EmCon Diode

IDB09E60
Electrical Characteristics, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
Dynamic Characteristics
Reverse recovery time
V_R=400V, I_F=9A, di_F/dt=800A/µs, T_j=25°C
V_R=400V, I_F=9A, di_F/dt=800A/µs, T_j=125°C
V_R=400V, I_F=9A, di_F/dt=800A/µs, T_j=150°C
t_rr
-
75
-
- 110 -
- 112 -
Peak reverse current
V_R=400V, I_F = 9A, di_F/dt=800A/µs, T_j=25°C
V_R=400V, I_F =9A, di_F/dt=800A/µs, T_j=125°C
V_R=400V, I_F =9A, di_F/dt=800A/µs, T_j=150°C
I_rrm
- 10.2 -
- 11.8 -
- 12.3 -
Reverse recovery charge
V_R=400V, I_F=9A, di_F/dt=800A/µs, T_j=25°C
V_R=400V, I_F =9A, di_F/dt=800A/µs, T_j=125°C
V_R=400V, I_F =9A, di_F/dt=800A/µs, T_j=150°C
Q_rr
- 343 -
- 585 -
- 612 -
Reverse recovery softness factor
S
V_R=400V, I_F=9A, di_F/dt=800A/µs, T_j=25°C
V_R=400V, I_F=9A, di_F/dt=800A/µs, T_j=125°C
V_R=400V, I_F=9A, di_F/dt=800A/µs, T_j=150°C
-
4
-
-
5.5
-
-
5.7
-
Unit
ns
A
nC
Rev.2.2
Page 3
2007-09-01