BSZ16DN25NS3G_11 Datasheet, PDF (5/9 Pages) Infineon Technologies AG – OptiMOSTM3 Power-Transistor

5 Typ. output characteristics
I _D=f(V _DS); T _j=25 °C
parameter: V _GS
25
6V
7V
20
10 V
5.5 V
5V
15
10
4.5 V
5
BSZ16DN25NS3 G
6 Typ. drain-source on resistance
R _DS(on)=f(I _D); T _j=25 °C
parameter: V _GS
240
200
160
120
5V
5.5 V
6V
10 V
8V
80
40
0
0
1
2
3
4
5
V_DS [V]
0
0
4
8
12
16
I_D [A]
7 Typ. transfer characteristics
I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max
parameter: T _j
25
8 Typ. forward transconductance
g _fs=f(I _D); T _j=25 °C
24
20
15
10
5
0
0
Rev. 2.2
150 °C
25 °C
2
4
6
V_GS [V]
20
16
12
8
4
0
8
0
page 5
4
8
12
16
I_D [A]
2011-07-14