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BSZ16DN25NS3G_11 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOSTM3 Power-Transistor | |||
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Type
OptiMOSTM3 Power-Transistor
Features
⢠Optimized for dc-dc conversion
⢠N-channel, normal level
⢠Excellent gate charge x R DS(on) product (FOM)
⢠Low on-resistance R DS(on)
⢠150 °C operating temperature
⢠Pb-free lead plating; RoHS compliant
⢠Qualified according to JEDEC1) for target application
⢠Halogen-free according to IEC61249-2-21
BSZ16DN25NS3 G
Product Summary
VDS
RDS(on),max
ID
250 V
165 mW
10.9 A
PG-TSDSON-8
Type
BSZ16DN25NS3 G
Package
Marking
PG-TSDSON-8 16DN25N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche energy, single pulse
Reverse diode dv /dt
ID
I D,pulse
E AS
dv /dt
T C=25 °C
T C=100 °C
T C=25 °C
I D=5.5 A, R GS=25 W
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
2) see figure 3
Value
10.9
7.7
44
120
10
±20
62.5
-55 ... 150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 2.2
page 1
2011-07-14
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