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| BSS229 Datasheet, PDF (5/6 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance) | |||
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BSS 229
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs, VDS ⥠2 à ID à RDS(on)max.
Typ. forward transconductance gfs = f (ID)
parameter: VDS ⥠2 à ID à R , DS(on)max. tp = 80 µs
Drain-source on-resistance
RDS(on) = f (Tj)
parameter: ID = 0.014 A, VGS = 0 V, (spread)
Typ. capacitances C = f (VDS)
parameter: VGS = 0, f = 1 MHz
Data Sheet
5
05.99
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