BSS229 Datasheet, PDF (1/6 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)

SIPMOS^® Small-Signal Transistor
q V_DS 250 V
q I_D
0.07 A
q R_DS(on) 100 Ω
q N channel
q Depletion mode
q High dynamic resistance
q Available grouped in V_GS(th)
BSS 229
1 ²³
Type
Ordering
Code
Tape and Reel
Information
BSS 229 Q62702-S600 E6296: 1500 pcs/reel;
2 reels/carton; source first
Pin Configuration Marking Package
123
GDS
SS229 TO-92
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage, R_GS = 20 kΩ
Gate-source voltage
ESD Sensitivity (HBM) as per MIL-STD 883
Continuous drain current, T_A = 25 ˚C
Pulsed drain current,
T_A = 25 ˚C
Max. power dissipation, T_A = 25 ˚C
Operating and storage temperature range
Symbol
V_DS
V_DGR
V_GS
–
I_D
I_{D puls}
P_tot
T_j, T_stg
Values
250
250
± 20
Class 1
0.07
0.21
0.63
– 55 … + 150
Unit
V
A
W
˚C
Thermal resistance, chip-ambient
(without heat sink)
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
R_thJA
–
–
≤ 200
K/W
E
–
55/150/56
Data Sheet
1
05.99