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| BSO615N Datasheet, PDF (5/8 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor | |||
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BSO 615N
Power Dissipation
Ptot = f (TA), VGS = 4,5 V
Drain current
ID = f (TA), VGS = 4,5 V
BSO 615N
2.4
W
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 ËC 160
TA
Safe operating area
ID = f ( VDS )
parameter : D = 0 , TA = 25 ËC, VGS = 4,5 V
10 2 BSO 615N
A
10 1
/ID
= V DS
R DS(on)
tp = 5.7µs
10 µs
100 µs
10 0
1 ms
10 ms
10 -1
DC
BSO 615N
2.8
A
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0 20 40 60 80 100 120 ËC 160
TA
Transient thermal impedance
ZthJA = f(tp)
parameter : D = tp/T
10 2 BSO 615N
K/W
10 1
10 0
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-2
10
-1
10 0
10 1
V
10 2
VDS
10
-1
10
-5
10 -4
10 -3
10 -2
10 -1
10 0
10 1
10 2
s 10 4
tp
Data Sheet
5
05.99
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