BSO615N Datasheet, PDF (1/8 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor

Preliminary Data
SIPMOS^® Small-Signal-Transistor
Features
Product Summary
• Dual N Channel
Drain source voltage
• Enhancement mode
Drain-Source on-state resistance
• Avalanche rated
Continuous drain current
• Logic Level
• dv/dt rated
BSO 615N
V_DS
60 V
R_DS(on) 0.15 Ω
I_D
2.6 A
Type
Package
BSO 615N SO 8
Maximum Ratings, at T_j = 25 ˚C, unless otherwise specified
Parameter
Symbol
Continuous drain current, one channel active
Pulsed drain current, one channel active
I_D
IDpulse
T_A = 25 ˚C
Avalanche energy, single pulse
E_AS
I_D = 2.6 A, V_DD = 25 V, R_GS = 25 Ω
Avalanche current,periodic limited by T_jmax
Avalanche energy, periodic limited by T_jmax
Reverse diode dv/dt
I_AR
E_AR
dv/dt
I_S = 2.6 A, V_DS = 40 V, di/dt = 200 A/µs,
T_jmax = 150 ˚C
Gate source voltage
V_GS
Power dissipation, one channel active
P_tot
T_A = 25 ˚C
Operating temperature
T_j
Storage temperature
T_stg
IEC climatic category; DIN IEC 68-1
Ordering Code
Q67041-S2843
Value
Unit
2.6
A
10.4
60
mJ
2.6
A
0.18
mJ
6
kV/µs
±20
V
2
W
-55 ... +150
˚C
-55 ... +150
55/150/56
Data Sheet
1
05.99