BSF134N10NJ3G Datasheet, PDF (5/13 Pages) Infineon Technologies AG – n-Channel Power MOSFET

OptiMOS™ Power-MOSFET
BSF134N10NJ3 G
Electrical characteristics
Table 6 Gate charge characteristics¹⁾
Parameter
Symbol
Min.
Gate to source charge
Q_gs
-
Gate to drain charge
Q_gd
-
Switching charge
Q_sw
-
Gate charge total
Q_g
-
Gate plateau voltage
V_plateau
-
Output charge
Q_oss
1) See figure 16 for gate charge parameter definition
Values
Typ.
8
4.1
9
23
4.7
32
Max.
-
-
-
30
-
42
Unit
nC
Note /
Test Condition
V_DD=50 V,
I_D=30 A,
V_GS=0 to 10 V
V
V_DD=50 V, V_GS=0 V
Table 7 Reverse diode characteristics
Parameter
Symbol
Diode continuous forward current
Diode pulse current
Diode forward voltage
I_s
I_S,pulse
V_SD
Min.
-
Reverse recovery charge
Reverse recovery time
t_rr
-
Q_rr
-
Values
Typ.
0.9
Max.
36
160
1.2
59
-
112
-
Unit Note /
Test Condition
A
T_C=25 °C
V
V_GS=0 V, I_F=I_S,
T_j=25 °C
nC V_R=50V, I_F=I_s,
ns
di_F/dt=100 A/µs
Final Data Sheet
4
2.3, 2011-03-01