BSF134N10NJ3G Datasheet, PDF (3/13 Pages) Infineon Technologies AG – n-Channel Power MOSFET

OptiMOS™ Power-MOSFET
BSF134N10NJ3 G
2
Maximum ratings
at T_j = 25 °C, unless otherwise specified.
Table 2 Maximum ratings
Parameter
Symbol
Values
Unit Note / Test Condition
Min. Typ. Max.
Continuous drain current
I_D
-
-
40
A
V_GS=10 V, T_C=25 °C
25
V_GS=10 V, T_C=100 °C
Pulsed drain current²⁾
I_D,pulse
9
-
-
160
V_GS=10 V, T_A=25 °C,
R_thJA=45 K/W¹⁾)
T_C=25 °C
Avalanche energy, single pulse
E_AS
-
-
70
mJ I_D=30 A,R_GS=25 Ω
Gate source voltage
V_GS
-20 -
20
V
Power dissipation
P_tot
-
-
43
W T_C=25 °C
2.2
T_A=25 °C, R_thJA=58 K/W¹⁾
Operating and storage temperature T_j,T_stg
-40 -
150
°C
IEC climatic category; DIN IEC 68-1
55/150/56
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection.
PCB is vertical in still air
2) See figure 3 for more detailed information
3
Thermal characteristics
Table 3 Thermal characteristics
Parameter
Symbol
Min.
Values
Typ.
Max.
Unit Note /
Test Condition
Thermal resistance, junction - case R_thJC
-
-
2.9
K/W top
-
-
1
bottom
Device on PCB
R_thJA
-
-
58
6 cm² cooling area¹⁾
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection.
PCB is vertical in still air
Final Data Sheet
2
2.3, 2011-03-01