BSC080N03MSG Datasheet, PDF (5/10 Pages) Infineon Technologies AG – OptiMOS™3 M-Series Power-MOSFET

5 Typ. output characteristics
I _D=f(V _DS); T _j=25 °C
parameter: V _GS
160
5V
120
10 V
80
40
0
0
1
2
V _DS [V]
7 Typ. transfer characteristics
I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max
parameter: T _j
120
4.5 V
4V
BSC080N03MS G
6 Typ. drain-source on resistance
R _DS(on)=f(I _D); T _j=25 °C
parameter: V _GS
14
3V
12
3.2 V
3.5 V
10
4V
4.5 V
8
5V
6V
6
10 V
3.5 V
3.2 V
3V
2.8 V
3
4
2
0
0
10
20
30
40
50
I _D [A]
8 Typ. forward transconductance
g _fs=f(I _D); T _j=25 °C
140
120
100
80
80
60
40
40
150 °C
25 °C
0
0
1
2
3
4
5
V _GS [V]
20
0
0
Rev.1.15
page 5
40
80
120
160
I _D [A]
2009-11-03