BSC080N03MSG Datasheet, PDF (1/10 Pages) Infineon Technologies AG – OptiMOS™3 M-Series Power-MOSFET

BSC080N03MS G
OptiMOS™3 M-Series Power-MOSFET
Features
• Optimized for 5V driver application (Notebook, VGA, POL)
• Low FOM_SW for High Frequency SMPS
• 100% avalanche tested
• N-channel
• Very low on-resistance R _DS(on) @ V _GS=4.5 V
• Excellent gate charge x R _DS(on) product (FOM)
• Qualified according to JEDEC¹⁾ for target applications
• Superior thermal resistance
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V _DS
R _DS(on),max
I_D
30 V
V _GS=10 V
V _GS=4.5 V
8 mΩ
10.2
53 A
PG-TDSON-8
Type
BSC080N03MS G
Package
PG-TDSON-8
Marking
080N03MS
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
V _GS=10 V, T _C=25 °C
V _GS=10 V, T _C=100 °C
V _GS=4.5 V, T _C=25 °C
V _GS=4.5 V,
T _C=100 °C
V _GS=4.5 V, T _A=25 °C,
R _thJA=50 K/W²⁾
Pulsed drain current³⁾
Avalanche current, single pulse⁴⁾
Avalanche energy, single pulse
Gate source voltage
1) _{J-STD20 and JESD22}
I _D,pulse
I _AS
E _AS
V _GS
T _C=25 °C
T _C=25 °C
I _D=35 A, R _GS=25 Ω
Value
Unit
53
A
33
47
30
13
212
45
15
mJ
±20
V
Rev.1.15
page 1
2009-11-03