BFG193 Datasheet, PDF (5/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

BFG193
Collector-base capacitance C_cb = f (V_CB)
f = 1MHz
1.3
pF
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
4
8
12
16 V 22
V_CB
Transition frequency f_T = f (I_C)
V_CE = Parameter
9.0
GHz
10V
7.0
5V
6.0
5.0
3V
4.0
2V
3.0
1V
2.0
0.7V
1.0
0.0
0 10 20 30 40 50 60 70 mA 90
I_C
Power Gain G_ma, G_ms = f(I_C)
f = 0.9GHz
V_CE = Parameter
20
dB
16
10V
5V
14
3V
12
2V
Power Gain G_ma, G_ms = f(I_C)
f = 1.8GHz
V_CE = Parameter
12
10V
dB
5V
3V
8
2V
6
10
8
1V
6
0.7V
4
0 10 20 30 40 50 60 70 mA 90
I_C
4
1V
2
0.7V
0
0 10 20 30 40 50 60 70 mA 90
I_C
5
Jun-27-2001