BFG193 Datasheet, PDF (1/6 Pages) Siemens Semiconductor Group – NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)

NPN Silicon RF Transistor

For low noise, high-gain amplifiers up to 2 GHz

For linear broadband amplifiers

f_T = 8 GHz
F = 1.3 dB at 900 MHz
BFG193
4
3
2
1
VPS05163
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
BFG193
Marking
BFG193
Pin Configuration
1=E 2=B 3=E 4=C
Package
SOT223
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
T_S
87 °C ¹⁾
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Junction - soldering point ²⁾
Symbol
V_CEO
V_CES
V_CBO
V_EBO
I_C
I_B
P_tot
T_j
T_A
T_stg
R_thJS
Value
12
20
20
2
80
10
600
150
-65 ... 150
-65 ... 150

105
Unit
V
mA
mW
°C
K/W
1_{TS is measured on the collector lead at the soldering point to the pcb}
2For _{calculation of RthJA please refer to Application Note Thermal Resistance}
1
Jun-27-2001