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BCP29 Datasheet, PDF (5/5 Pages) Siemens Semiconductor Group – NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain) | |||
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BCP29, BCP49
DC current gain hFE = f (IC)
VCE = 5V
10 6 BCP 29/49
h FE 5
125 ËC
10 5
25 ËC
5
-55 ËC
10 4
5
EHP00255
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 1000
10 3 BCP 29/49
Î C mA
10 2
5
EHP00256
150 ËC
25 ËC
-50 ËC
10 1
5
10 3
10 -1
10 0
10 1
102 mA 103
ÎC
10 0
0
0.5
1.0 V 1.5
V CEsat
Collector-base capacitance CCB = f (VCBO) Base-emitter saturation voltage
Emitter-base capacitance CEB = f (VEBO) IC = f (VBEsat), hFE = 1000
10 BCP 29/49
CEB0
(CCB0 )
pF
5
EHP00257
10 3 BCP 29/49
Î C mA
10 2
CCB0
5
CEB0
10 1
5
EHP00258
150 ËC
25 ËC
-50 ËC
0
10 0
10 -1
10 0
V
10 1
0
1.0
2.0 V 3.0
VEB0 (VCB0 )
V BEsat
5
Nov-29-2001
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