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| BCP29 Datasheet, PDF (2/5 Pages) Siemens Semiconductor Group – NPN Silicon Darlington Transistors (For general AF applications High collector current High current gain) | |||
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BCP29, BCP49
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, IB = 0
BCP29
30
-
BCP49
60
-
V
-
-
Collector-base breakdown voltage
V(BR)CBO
IC = 100 µA, IE = 0
BCP29
40
-
-
BCP49
80
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
Collector cutoff current
VCB = 30 V, IE = 0
VCB = 60 V, IE = 0
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
VCB = 60 V, IE = 0 , TA = 150 °C
BCP29
BCP49
BCP29
BCP49
V(BR)EBO 10
ICBO
-
-
ICBO
-
-
-
-
nA
-
100
-
100
µA
-
10
-
10
Emitter cutoff current
VEB = 5 V, IC = 0
DC current gain 1)
IC = 100 µA, VCE = 1 V
BCP29
BCP49
IEBO
hFE
-
-
100 nA
4000 -
2000 -
-
-
-
DC current gain 1)
IC = 10 mA, VCE = 5 V
hFE
BCP29
10000 -
-
BCP49
4000 -
-
DC current gain 1)
IC = 100 mA, VCE = 5 V
hFE
BCP29
20000 -
-
BCP49
10000 -
-
DC current gain 1)
IC = 500 mA, VCE = 5 V
hFE
BCP29
BCP49
4000 -
-
2000 -
-
1) Pulse test: t ⤠300µs, D = 2%
2
Nov-29-2001
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