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| BCM856S Datasheet, PDF (5/8 Pages) Infineon Technologies AG – PNP Silicon AF Transistor Array | |||
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BCM856S
Transition frequency fT = (IC)
VCE = 5 V
10 3
MHz
fT 5
EHP00378
10 2
5
Base-emitter saturation voltage
IC = (VBEsat), hFE = 20
10 2
mA
ÎC
10 1
5
100 C
25 C
-50 C
EHP00379
10 0
5
10 1
10 -1
5 10 0
5 101
mA 10 2
ÎC
Collector-emitter saturation voltage
IC = (VCEsat), hFE = 20
10 -1
0
0.2 0.4 0.6 0.8
Collector current IC = (VBE)
VCE = Parameter
V 1.2
V BEsat
10 2
mA
ÎC
10 1
5
EHP00380
100 C
25 C
-50 C
10 -1
A
10 -2
5V
5V
5V
1V
1V
1V
10 -3
TA=100°C
TA=25°C
10 -4
TA=-50°C
10 0
5
10 -5
10 -1
0
0.1 0.2 0.3 0.4 V 0.5
VCEsat
10 -6
0.2 0.3 0.4 0.5 0.6 0.7 0.8 V
1
VBE
5
Aug-30-2002
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