BCM856S Datasheet, PDF (2/8 Pages) Infineon Technologies AG – PNP Silicon AF Transistor Array

BCM856S
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I_C = 10 mA, I_B = 0 A
Collector-base breakdown voltage
I_C = 10 µA, I_E = 0 A
Collector-emitter breakdown voltage
I_C = 10 µA, V_BE = 0 A
Emitter-base breakdown voltage
I_E = 10 µA, I_C = 0 A
Collector-base cutoff current
V_CB = 30 V, I_E = 0 A
V_CB = 30 V, I_E = 0 A, T_A = 150 °C
DC current gain-¹⁾
I_C = 10 µA, V_CE = 5 V
I_C = 2 mA, V_CE = 5 V
Collector-emitter saturation voltage¹⁾
I_C = 10 mA, I_B = 0.5 mA
I_C = 100 mA, I_B = 5 mA
Base emitter saturation voltage¹⁾
I_C = 10 mA, I_B = 0.5 mA
I_C = 100 mA, I_B = 5 mA
Base-emitter voltage-¹⁾
I_C = 2 mA, V_CE = 5 V
I_C = 10 mA, V_CE = 5 V
Matching
I_B = 1 µA, V_CE1 = V_CE2 = 1.0V
I_B = 100 µA, V_CE1 = V_CE2 = 1.0V
V_(BR)CEO 65
-
-
V_(BR)CBO 80
-
-
V_(BR)CES 80
-
-
V_(BR)EBO 5
-
-
I_CBO
-
-
15
-
-
5
h_FE
-
250
-
200 290 450
V_CEsat
-
90 300
-
250 650
V_BEsat
-
700
-
-
850
-
V_BE(ON)
600 650 750
-
-
820

I_C
-10
-
10
-10
-
10
1_{Puls test: t < 300µs; D < 2%}
Unit
V
nA
-
mV
mV
mV
%
2
Aug-30-2002