BC856_08 Datasheet, PDF (5/14 Pages) Infineon Technologies AG – PNP Silicon AF Transistor

BC856...-BC860...
Electrical Characteristics at T_A = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics
Transition frequency
I_C = 20 mA, V_CE = 5 V, f = 100 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
Short-circuit input impedance
I_C = 2 mA, V_CE = 5 V, f = 1 kHz, h_FE-grp.A
I_C = 2 mA, V_CE = 5 V, f = 1 kHz, h_FE-grp.B
I_C = 2 mA, V_CE = 5 V, f = 1 kHz, h_FE-grp.C
Open-circuit reverse voltage transf. ratio
I_C = 2 mA, V_CE = 5 V, f = 1 kHz, h_FE-grp.A
I_C = 2 mA, V_CE = 5 V, f = 1 kHz, h_FE-grp.B
I_C = 2 mA, V_CE = 5 V, f = 1 kHz, h_FE-grp.C
f_T
C_cb
C_eb
h_11e
h_12e
-
250
- MHz
-
1.5
- pF
-
8
-
kΩ
-
2.7
-
-
4.5
-
-
8.7
-
10^-4
-
1.5
-
-
2
-
-
3
-
Short-circuit forward current transf. ratio
I_C = 2 mA, V_CE = 5 V, f = 1 kHz, h_FE-grp.A
I_C = 2 mA, V_CE = 5 V, f = 1 kHz, h_FE-grp.B
I_C = 2 mA, V_CE = 5 V, f = 1 kHz, h_FE-grp.C
h_21e
-
-
200
-
-
330
-
-
600
-
Open-circuit output admittance
I_C = 2 mA, V_CE = 5 V, f = 1 kHz, h_FE-grp.A
I_C = 2 mA, V_CE = 5 V, f = 1 kHz, h_FE-grp.B
I_C = 2 mA, V_CE = 5 V, f = 1 kHz, h_FE-grp.C
Noise figure
I_C = 0.2 mA, V_CE = 5 V, f = 1 kHz,
D f = 200 Hz, R_S = 2 kΩ, BC859, BC850
h_22e
F
µS
-
18
-
-
30
-
-
60
-
-
1
4 dB
Equivalent noise voltage
I_C = 200 mA, V_CE = 5 V, R_S = 2 kΩ,
f = 10...50 Hz, BC860
V_n
-
- 0.11 µV
5
2008-04-29