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BC856_08 Datasheet, PDF (3/14 Pages) Infineon Technologies AG – PNP Silicon AF Transistor | |||
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BC856...-BC860...
Maximum Ratings
Parameter
Collector-emitter voltage
BC856...
BC857..., BC860...
BC858..., BC859...
Symbol
VCEO
Value
65
45
30
Collector-base voltage
BC856...
BC857..., BC860...
BC858..., BC859...
Emitter-base voltage
Collector current
Peak collector current, tp ⤠10 ms
Total power dissipation
TS ⤠71 °C, BC856-BC860
TS ⤠128 °C, BC857BF-BC858BF
TS ⤠135 °C, BC857BL3, BC860BL3
TS ⤠124 °C, BC856W-BC860W
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point1)
BC856-BC860
BC857BF-BC858BF
BC857BL3, BC858BL3
BC856W-BC860W
VCBO
VEBO
IC
ICM
Ptot
Tj
Tstg
Symbol
RthJS
80
50
30
5
100
200
330
250
250
250
150
-65 ... 150
Value
⤠240
⤠90
⤠60
⤠105
1For calculation of RthJA please refer to Application Note Thermal Resistance
Unit
V
mA
mW
°C
Unit
K/W
3
2008-04-29
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