AUIRL1404Z Datasheet, PDF (5/13 Pages) International Rectifier – HEXFET® Power MOSFET

200
Limited By Package
150
100
50
0
25
50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
AUIRL1404Z/S/L
2.0
ID = 75A
VGS = 10V
1.5
1.0
0.5
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 10. Normalized On-Resistance
vs. Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
0.01
0.001
0.02
0.01
_{J J}
_{1 1}
R_1R1
SINGLE PULSE
( THERMAL RESPONSE )
Ci= iRi
Ci= iRi
0.0001
1E-006
1E-005
0.0001
R_2R2
_{2 2}
R_3R3
_{3 3}
_CC
Ri (°C/W)
0.212
0.277
0.261
i (sec)
0.000213
0.001234
0.021750
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
2015-10-27