AUIRL1404Z Datasheet, PDF (1/13 Pages) International Rectifier – HEXFET® Power MOSFET

AUTOMOTIVE GRADE
Features
 Logic Level
 Advanced Process Technology
 Ultra Low On-Resistance
 175°C Operating Temperature
 Fast Switching
 Repetitive Avalanche Allowed up to Tjmax
 Lead-Free, RoHS Compliant
 Automotive Qualified *
Description
Specifically designed for Automotive applications, this HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely low
on-resistance per silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and improved repetitive
avalanche rating . These features combine to make this design an extremely
efficient and reliable device for use in Automotive applications and a wide
variety of other applications.
AUIRL1404Z
AUIRL1404ZS
AUIRL1404ZL
HEXFET^® Power MOSFET
V_DSS
40V
R_DS(on) typ.
2.5m
max.
3.1m
I_{D (Silicon Limited)}
180A
I_{D (Package Limited)}
160A
D
D
GDS
TO-220AB
AUIRL1404Z
G
Gate
S
G
D²Pak
AUIRL1404ZS
D
Drain
S
GD
TO-262
AUIRL1404ZL
S
Source
Base part number Package Type
Standard Pack
Form
Quantity
Orderable Part Number
AUIRL1404Z
TO-220
Tube
50
AUIRL1404Z
AUIRL1404ZL
TO-262
Tube
50
AUIRL1404ZL
AUIRL1404ZS
D²-Pak
Tube
50
Tape and Reel Left
800
AUIRL1404ZS
AUIRL1404ZSTRL
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance
and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless
otherwise specified.
Symbol
Parameter
I_D @ T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
I_D @ T_C = 100°C
I_D @ T_C = 25°C
Continuous Drain Current, V_GS @ 10V (Silicon Limited)
Continuous Drain Current, V_GS @ 10V (Package Limited)
I_DM
P_D @T_C = 25°C
Pulsed Drain Current 
Maximum Power Dissipation
Linear Derating Factor
V_GS
E_AS
E_AS (tested)
I_AR
E_AR
T_J
T_STG
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited) 
Single Pulse Avalanche Energy Tested Value 
Avalanche Current 
Repetitive Avalanche Energy 
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Symbol
Parameter
R_JC
R_CS
R_JA
R_JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface 
Junction-to-Ambient 
Junction-to-Ambient ( PCB Mount, steady state) 
HEXFET® is a registered trademark of Infineon.
*Qualification standards can be found at www.infineon.com
Max.
180
130
160
790
200
1.3
± 16
190
490
See Fig.15,16, 12a, 12b
-55 to + 175
300
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
0.75
–––
62
40
Units
A
W
W/°C
V
mJ
A
mJ
°C
Units
°C/W
1
2015-10-27