AUIRF7665S2_15 Datasheet, PDF (5/11 Pages) Infineon Technologies AG – Automotive DirectFET Power MOSFET

AUIRF7665S2TR
100
6.5
TJ = -40°C
TJ = 25°C
TJ = 175°C
5.5
10
4.5
3.5
ID = 25µA
ID = 250µA
2.5 ^{ID = 1.0mA}
D = 1.0A
1.5
-75 -50 -25 0 25 50 75 100 125 150 175
TJ , Temperature ( °C )
Fig. 7 Typical Threshold Voltage vs.
Junction Temperature
20
18
TJ = 25°C
16
14
12
10
TJ = 175°C
8
6
4
VDS = 10V
2
380µs PULSE WIDTH
0
0 2 4 6 8 10 12 14 16 18
ID,Drain-to-Source Current (A)
Fig 9. Typical Forward Trans conductance vs. Drain Current
14.0
ID= 8.9A
12.0
VDS= 80V
10.0
VDS= 50V
VDS= 20V
8.0
6.0
4.0
2.0
0.0
0
2
4
6
8
10 12
QG, Total Gate Charge (nC)
Fig 11. Typical Gate Charge vs.
Gate-to-Source Voltage
5
1
0.1
VGS = 0V
0.01
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VSD, Source-to-Drain Voltage (V)
Fig 8. Typical Source-Drain Diode Forward Voltage
10000
1000
VGS = 0V, f = 1 MHZ
Ciss = C _gs + Cgd, C _ds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
100
Crss
10
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 10. Typical Capacitance vs. Drain-to-Source Voltage
16
14
12
10
8
6
4
2
0
25
50 75 100 125 150 175
TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
2015-10-5