AUIRF7665S2_15 Datasheet, PDF (2/11 Pages) Infineon Technologies AG – Automotive DirectFET Power MOSFET

AUIRF7665S2TR
Thermal Resistance
Symbol
Parameter
R_JA
R_JA
R_JA
R_J-Can
R_J-PCB
Junction-to-Ambient 
Junction-to-Ambient 
Junction-to-Ambient 
Junction-to-Can 
Junction-to-PCB Mounted
Linear Derating Factor 
Typ.
–––
12.5
20
–––
1.4
Max.
63
–––
–––
5.0
–––
0.2
Units
°C/W
W/°C
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
V_(BR)DSS/T_J
R_DS(on)
V_GS(th)
V_GS(th)/T_J
gfs
R_G
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Forward Transconductance
Internal Gate Resistance
I_DSS
Drain-to-Source Leakage Current
100 ––– ––– V V_GS = 0V, I_D = 250µA
––– 0.10 ––– V/°C Reference to 25°C, I_D = 1.0mA
––– 51 62 _m V_GS = 10V, I_D = 8.9A 
3.0 4.0 5.0 V
––– -13 ––– mV/°C ^{VDS = VGS, ID = 25µA}
8.8 ––– –––
––– 3.5 5.0
S V_DS = 25V, I_D = 8.9A

––– ––– 5.0
––– ––– 250
µA
V_DS = 100V, V_GS = 0V
V_DS = 80V, V_GS = 0V, T_J = 125°C
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 100
––– ––– -100
nA
V_GS = 20V
V_GS = -20V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Q_g
Q_gs1
Q_gs2
Q_gd
Q_godr
Q_sw
Q_oss
t_d(on)
t_r
t_d(off)
t_f
C_iss
C_oss
C_rss
C_oss
C_oss
C_oss
Total Gate Charge
Gate-to-Source Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Gate Charge Overdrive
Switch Charge (Q_gs2 + Q_gd)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Output Capacitance
––– 8.3 13
––– 1.9 –––
––– 0.77 –––
––– 3.2 –––
––– 2.4 –––
––– 4.0 –––
––– 4.7 –––
––– 3.8 –––
––– 6.4 –––
––– 7.1 –––
––– 3.6 –––
––– 515 –––
––– 110 –––
––– 30 –––
––– 530 –––
––– 70 –––
––– 115 –––
V_DS = 50V
V_GS = 10V
nC
I_D = 8.9A
See Fig. 11
nC VDS = 16V, VGS = 0V
V_DD = 50V
ns
I_D = 8.9A
R_G = 6.8
V_GS = 10V 
V_GS = 0V
V_DS = 25V
ƒ = 1.0 MHz
pF _{VGS = 0V, VDS = 1.0V, ƒ = 1.0 MHz}
V_GS = 0V, V_DS = 80V, ƒ = 1.0 MHz
V_GS = 0V, V_DS = 0 to 80V
Notes  through  are on page 3
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2015-10-5