SPP02N60C3 Datasheet, PDF (4/12 Pages) Infineon Technologies AG – Cool MOS Power Transistor

Final data
SPP02N60C3
SPB02N60C3
Electrical Characteristics, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Inverse diode continuous
forward current
I_S
T_C=25°C
-
-
1.8 A
Inverse diode direct current,
I_SM
pulsed
-
-
5.4
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
V_SD
t_rr
Q_rr
I _rrm
di_rr/dt
V_GS=0V, I_F=I_S
V_R=420V, I_F=I_S ,
di_F/dt=100A/µs
-
1 1.2 V
- 200 350 ns
-
1.3
- µC
-
9
-A
-
- 200 A/µs
Typical Transient Thermal Characteristics
Symbol
Value
Unit Symbol
Value
typ.
typ.
Thermal resistance
Thermal capacitance
R_th1
R_th2
R_th3
R_th4
R_th5
R_th6
0.1
0.184
0.306
1.207
0.974
0.251
K/W
C_th1
C_th2
C_th3
C_th4
C_th5
C_th6
0.00002806
0.0001113
0.0001679
0.000547
0.001388
0.035
Unit
Ws/K
P_tot (t)
T_j R _th1
C _{th 1}
C _{th 2}
R_th,n T_case ^{External Heatsink}
C _{th ,n}
T_amb
Page 4
2003-10-02