SPP02N60C3 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Cool MOS Power Transistor

Final data
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
SPP02N60C3
SPB02N60C3
V_DS @ T_jmax 650
V
R_DS(on)
3
Ω
I_D
1.8 A
P-TO263-3-2 P-TO220-3-1
Type
SPP02N60C3
SPB02N60C3
Package
P-TO220-3-1
P-TO263-3-2
Ordering Code
Q67040-S4392
Q67040-S4393
Marking
02N60C3
02N60C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
I_D
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
I_{D puls}
Avalanche energy, single pulse
E_AS
I_D = 1.35 A, V_DD = 50 V
Avalanche energy, repetitive t_AR limited by T_jmax¹⁾ E_AR
I_D = 1.8 A, V_DD = 50 V
Avalanche current, repetitive t_AR limited by T_jmax I_AR
Gate source voltage static
V_GS
Gate source voltage AC (f >1Hz)
V_GS
Power dissipation, T_C = 25°C
Operating and storage temperature
P_tot
T_j , T_stg
Value
Unit
A
1.8
1.1
5.4
50
mJ
0.07
1.8
A
±20
V
±30
25
W
-55... +150
°C
Page 1
2003-10-02