SMBTA14_07 Datasheet, PDF (4/6 Pages) Infineon Technologies AG – NPN Silicon Darlington Transistor High collector current Low collector-emitter saturation voltage

SMBTA14/MMBTA14
Transition frequency f_T = ƒ(I_C)
V_CE = 5 V, f = 200 MHz
Collector-base capacitance C_cb = ƒ(V_CB)
Emitter-base capacitance C_eb = ƒ(V_EB)
10 ^{3 SMBTA 13/14}
MHz
f_{T 5}
EHP00825
10 ²
5
10 ¹
10 ⁰
5 10 ¹
5 10 ²
mA 10 ³
Ι_C
Total power dissipation P_tot = ƒ(T_S)
19
pF
15
13
11
CEB
9
7
5
3
1
0
4
8
12
Permissible Pulse Load
P_totmax/P_totDC = ƒ(t_p)
CCB
16 V 22
V_CB/V_EB
360
mW
300
270
240
210
180
150
120
90
60
30
0
0 15 30 45 60 75 90 105 120 _°C 150
T_S
10 ^{3 SMBTA 13/14}
P_{tot max}
P_{tot DC}
5
10 ²
5
10 ¹
5
EHP00824
D = ^tp
T
t_p
T
D=
0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 ⁰
10 ^-6 10 ^-5 10 ^-4 10 ^-3 10 ^-2 s
10 ⁰
t_p
4
2007-04-19