SMBTA14_07 Datasheet, PDF (1/6 Pages) Infineon Technologies AG – NPN Silicon Darlington Transistor High collector current Low collector-emitter saturation voltage

NPN Silicon Darlington Transistor
• High collector current
• Low collector-emitter saturation voltage
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
SMBTA14/MMBTA14
3
2
1
Type
SMBTA14/MMBTA14
Marking
s1N
Pin Configuration
1=B
2=E
3=C
Package
SOT23
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
V_CES
Collector-base voltage
V_CBO
Emitter-base voltage
V_EBO
Collector current
I_C
Peak collector current
I_CM
Base current
I_B
Peak base current
I_BM
Total power dissipation-
P_tot
T_S ≤ 81 °C
Junction temperature
T_j
Storage temperature
T_stg
Thermal Resistance
Parameter
Symbol
Junction - soldering point²⁾
R_thJS
1_{Pb-containing package may be available upon special request}
2_{For calculation of RthJA please refer to Application Note Thermal Resistance}
Value
30
30
10
300
500
100
200
330
150
-65 ... 150
Value
≤ 210
Unit
V
mA
mW
°C
Unit
K/W
1
2007-04-19