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| SMBTA06 Datasheet, PDF (4/4 Pages) Infineon Technologies AG – NPN Silicon AF Transistor | |||
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SMBTA06/ MMBTA06
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 10
10 3
mA
ÎC
10 2
5
EHP00818
100 ËC
25 ËC
-50 ËC
10 1
5
10 0
5
Collector-emitter saturation voltage
IC = f (VCEsat), hFE = 10
10 3
Î C mA
10 2
5
100 C
25 C
-50 C
EHP00819
10 1
5
10 -1
0
0.5
1.0
V 1.5
V BEsat
Collector cutoff current ICBO = f (TA)
VCB = 80V
10 0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 V 0.8
V CEsat
DC current gain hFE = f (IC)
VCE = 1V
10 4
nA
Î CBO
10 3
5
10 2
5
10 1
5
10 0
5
10 -1
0
EHP00820
max
typ
10 3
h FE
100 C
10 2 25 C
-50 C
10 1
EHP00821
10 0
50
100
C 150
10 -1
10 0
10 1
10 2 mA 10 3
TA
ÎC
4
Feb-20-2002
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