SMBTA06 Datasheet, PDF (1/4 Pages) Infineon Technologies AG – NPN Silicon AF Transistor

NPN Silicon AF Transistor

High breakdown voltage

Low collector-emitter saturation voltage

Complementary type: SMBTA56 (PNP)
MMBTA56 (PNP)
SMBTA06/ MMBTA06
3
2
1 _VPS05161
Type
Marking
SMBTA06/ MMBTA06 s1G
1=B
Pin Configuration
2=E
3=C
Package
SOT23
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Total power dissipation, T_S = 79 °C
Junction temperature
Storage temperature
Symbol
V_CEO
V_CBO
V_EBO
I_C
I_CM
I_B
I_BM
P_tot
T_j
T_stg
Value
80
80
4
500
1
100
200
330
150
-65 ... 150
Thermal Resistance
Junction - soldering point¹⁾
R_thJS
1For _{calculation of RthJA please refer to Application Note Thermal Resistance}

215
Unit
V
mA
A
mA
mW
°C
K/W
1
Feb-20-2002