PXFC191507FC_16 Datasheet, PDF (4/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 – 1990 MHz

PXFC191507FC
Typical Performance (cont.)
Small Signal CW Performance
Gain & Input Return Loss
V_DD = 28 V, I_DQ = 960 mA
22
0
Gain
21
-5
20
-10
19
-15
IRL
18
-20
17
1800
1850
1900 1950 2000
Frequency (MHz)
c191507fc_g6
-25
2050 2100
Broadband Circuit Impedance
Z Source
D
Z Load
G
S
Freq
[MHz]
1930
1960
1990
Z Source W
R
jX
1.34
–4.30
1.28
–4.15
1.25
–4.04
Z Load W
R
jX
1.55
–3.14
1.54
–2.99
1.52
–2.86
Load Pull Performance
Main Side Load Pull Performance – Pulsed CW signal: 100 µs, 10% duty cycle, V_DD = 28 V, I_DQ = 960 mA
P_1dB
Max Output Power
Max PAE
Freq
Zs
[MHz]
[W]
Zl
Gain
P_OUT
P_OUT
PAE
Zl
Gain
P_OUT
P_OUT
PAE
[W]
[dB] [dBm]
[W]
[%]
[W]
[dB]
[dBm]
[W]
[%]
1805 1.00 – j3.39 1.36 – j2.81 18.2
52.30
170
58.1 2.82 – j2.46 20.4
50.40
110
65.7
1880 1.38 – j3.80 1.26 – j3.35 17.8
52.10
164
54.7 2.48 – j2.33 20.2
50.50
112
64.8
1930 1.88 – j4.65 1.14 – j3.38 17.6
52.10
162
52.1 2.25 – j2.06 20.1
50.20
104
63.7
1990 2.85 – j4.62 1.31 – j3.40 18.4
52.00
157
56.4 1.81 – j2.40 19.9
50.60
116
62.8
Data Sheet
4 of 8
Rev. 02.1, 2016-06-22