PXFC191507FC_16 Datasheet, PDF (2/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 150 W, 28 V, 1805 – 1990 MHz

PXFC191507FC
DC Characteristics (each side)
Characteristic
Conditions
Symbol Min Typ
Drain-Source Breakdown Voltage V_GS = 0 V, I_DS = 10 mA
V(_BR)DSS
65
—
Drain Leakage Current
V_DS = 28 V, V_GS = 0 V
I_DSS
—
0.05

V_DS = 63 V, V_GS = 0 V
I_DSS
—
—
On-State Resistance
V_GS = 10 V, V_DS = 0.1 V
R_DS(on)
—
0.05
Operating Gate Voltage
V_DS = 26 V, I_DQ = 960 mA
V_GS
2.3
2.6
Gate Leakage Current
V_GS = 10 V, V_DS = 0 V
I_GSS
—
—
Max
—
1
10
—
2.9
1
Unit
V
µA
µA
W
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 140 W CW)
Symbol Value
V_DSS
V_GS
V_DD
T_J
T_STG
R_qJC
65
–6 to +10
0 to +32
225
–65 to +150
0.43
Unit
V
V
V
°C
°C
°C/W
Ordering Information
Type and Version
PXFC191507FC V1 R0
PXFC191507FC V1 R250
Order Code
PXFC191507FCV1R0XTMA1
PXFC191507FCV1R250XTMA1
Package Description
H-37248G-4/2, earless flange
H-37248G-4/2, earless flange
Shipping
Tape & Reel, 50 pcs
Tape & Reel, 250 pcs
Data Sheet
2 of 8
Rev. 02.1, 2016-06-22