PTVA101K02EV Datasheet, PDF (4/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz

PTVA101K02EV
Typical RF Performance (cont.) (tested with LTN/PTVA101K02EV V1 test fixture, 1030 MHz)
Power Sweep, Pulsed RF, Vdd vs
Gain&Eff
V_DD = 50 V, I_DQ = 150 mA, T_CASE = 25°C
128µs, 10% D.C, ƒ = 1030 MHz
26
30 V
60
35 V
22
40 V
45 V
50
50 V
18
40
14
30
Gain
10
20
6
10
Efficiency
2
a101k02ev_1-5
0
30 35 40 45 50 55 60 65
P_OUT (dBm)
Typical RF Performance (tested with LTN/PTVA101K02EV E6 test fixture, 1090 MHz)
Power Sweep, Pulsed RF
V_DD = 50 V, I_DQ = 150 mA, T_CASE = 25°C
ƒ = 1090 MHz
30
26
22
18
14
10
6
2
30
128µs, 10%
128µs, 1%
Gain
Efficiency
35 40 45 50 55
P_OUT (dBm)
70
60
50
40
30
20
10
a101k02ev_1-3
0
60 65
Power Sweep, Pulsed RF
V_DD = 50 V, I_DQ = 150 mA, T_CASE = 25°C
ƒ = 1090 MHz
26
22
Gain
18
14
10
6
128µs, 10%
128µs, 1%
2
a101k02ev_1-4
20 24 28 32 36 40 44 48
P_IN (dBm)
Data Sheet
4 of 9
Rev. 02.1, 2016-04-19