PTVA101K02EV Datasheet, PDF (1/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 1000 W, 50 V, 1030 / 1090 MHz

PTVA101K02EV
Thermally-Enhanced High Power RF LDMOS FET
1000 W, 50 V, 1030 / 1090 MHz
Description
The PTVA101K02EV LDMOS FET is designed for use in power
amplifier applications in the 1030 MHz / 1090 MHz frequency band.
Features include high gain and thermally-enhanced package with
bolt-down flange. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PTVA101K02EV
Package H-36275-4
Power Sweep, Pulsed RF
V_DD = 50 V, I_DQ = 150 mA, T_CASE = 25°C
ƒ = 1030 MHz
26
60
128µs, 10%
22
128µs, 1%
50
MODE-S
18
40
14
30
Gain
10
20
6
10
Efficiency
2
a101k02ev_1-1
0
30 35 40 45 50 55 60 65
P_out (dBm)
Features
• Broadband input matching
• High gain and efficiency
• Integrated ESD protection
• Human Body Model Class 2 (per ANSI/ESDA/
JEDEC JS-001)
• Low thermal resistance
• Pb-free and RoHS compliant
• Capable of withstanding a 10:1 load mismatch
(all phase angles) at 1000 W under MODE–S
pulse condition, (32µS ON / 18µS OFF) X 80,
LTDF = 6.4%.
RF Characteristics
Pulsed RF Performance (tested in Infineon test fixture)
V_DD = 50 V, I_DQ = 0.15 A, P_OUT = 900 W, ƒ = 1030 MHz, 128 µs pulse width, 10% duty cycle
Characteristic
Gain
Drain Efficiency
Symbol
Min
Typ
G_ps
17
18
h_D
62
65
Max
21
—
Unit
dB
%
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 9
Rev. 02.1, 2016-04-19