PTFA092213EL Datasheet, PDF (4/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920-960 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Intermodulation Distortion vs.
Output Power
V_DD = 30 V, I_DQ = 1.85 A,
ƒ₁ = 960 MHz, ƒ₂ = 959 MHz
-20
-30
5th
-40
3rd Order
-50
-60
-70
35
7th
40
45
50
55
Output Power, PEP (dBm)
Single-carrier WCDMA Performance
V_DD = 30 V, I_DQ = 1850 mA, ƒ = 960 MHz,
3GPP WCDMA signal, PAR = 8.5 dB,
3.84 MHz Bandwidth
60
-30
50
IMD
-35
40
-40
30
-45
Gain
20
-50
10 ^Efficiency
-55
0
30
35
40
45
Output Power (dBm)
-60
50
PTFA092213EL
PTFA092213FL
IS-95 CDMA Performance
V_DD = 30 V, I_DQ = 1.85 A, ƒ = 960 MHz
50
40
30 ^{Adj 750 kHz}
Efficiency
20
Alt₁ 1.98 MHz
10
0
30
35
40
45
Output Power (dBm), Avg.
-30
-40
-50
-60
-70
-80
50
Data Sheet
4 of 10
Rev. 04, 2010-11-04