PTFA092213EL Datasheet, PDF (3/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920-960 MHz

Confidential, Limited Internal Distribution
Typical Performance
CW Performance
Gain & Efficiency vs. Output Power
V_DD = 30 V, I_DQ = 1.85 A, ƒ = 960 MHz
20
19
18
17
16
15
14
13
35
Gain
Efficiency
40
45
50
Output Power (dBm)
70
60
50
40
30
20
10
0
55
Broadband Two-tone
Gain, Efficiency & Return Loss
vs. Frequency
V_DD = 30 V, I_DQ = 1.85 A, P_OUT = 110 W
50
0
45
Efficiency
-5
40
-10
35
-15
Return Loss
30
-20
25
-25
20
Gain
-30
15
-35
10
-40
900 910 920 930 940 950 960 970 980 990
Frequency (MHz)
PTFA092213EL
PTFA092213FL
CW Performance
Gain & Efficiency vs. Output Power
V_DD = 30 V, I_DQ = 1.85 A, ƒ = 960 MHz
21
20
T_CASE = -10°C
T_CASE = 25°C
19 ^{TCASE = 90°C}
Efficiency
18
17
16
15
Gain
14
35
40
45
50
Output Power (dBm)
70
60
50
40
30
20
10
0
55
Power Sweep, CW
V_DD = 30 V, ƒ = 960 MHz
20
19
18 I_DQ = 2.6 A
17 ^{IDQ = 1.85 A}
16 ^{IDQ = 1.1 A}
15
35
40
45
50
55
Output Power (dBm)
Data Sheet
3 of 10
Rev. 04, 2010-11-04