IPN60R1K5CE Datasheet, PDF (4/13 Pages) Infineon Technologies AG – 600V CoolMOSª CE Power Transistor

600VCoolMOSªCEPowerTransistor
IPN60R1K5CE
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage curent
Drain-source on-state resistance
Gate resistance
V(BR)DSS
VGS(th)
IDSS
IGSS
RDS(on)
RG
Min.
600
2.50
-
-
-
-
-
-
Values
Typ. Max.
-
-
3
3.50
-
1
10 -
-
100
1.35 1.50
3.51 -
14 -
Unit Note/TestCondition
V VGS=0V,ID=0.25mA
V
VDS=VGS,ID=0.09mA
µA
VDS=600V,VGS=0V,Tj=25°C
VDS=600V,VGS=0V,Tj=150°C
nA VGS=20V,VDS=0V
Ω
VGS=10V,ID=1.1A,Tj=25°C
VGS=10V,ID=1.1A,Tj=150°C
Ω f=1MHz,opendrain
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Output capacitance
Effective output capacitance, energy
related¹⁾
Effective output capacitance, time
related²⁾
Turn-on delay time
Ciss
Coss
Co(er)
Co(tr)
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Min.
-
-
Values
Typ. Max.
200 -
16 -
Unit Note/TestCondition
pF VGS=0V,VDS=100V,f=1MHz
pF VGS=0V,VDS=100V,f=1MHz
-
11 -
pF VGS=0V,VDS=0...480V
-
41.3 -
pF ID=constant,VGS=0V,VDS=0...480V
-
8
-
ns
VDD=400V,VGS=13V,ID=1.4A,
RG=12.2Ω
-
7
-
ns
VDD=400V,VGS=13V,ID=1.4A,
RG=12.2Ω
-
40 -
ns
VDD=400V,VGS=13V,ID=1.4A,
RG=12.2Ω
-
20 -
ns
VDD=400V,VGS=13V,ID=1.4A,
RG=12.2Ω
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Qgs
Qgd
Qg
Vplateau
Min.
-
-
-
-
Values
Typ. Max.
1.1 -
5
-
9.4 -
5.4 -
Unit Note/TestCondition
nC VDD=480V,ID=1.4A,VGS=0to10V
nC VDD=480V,ID=1.4A,VGS=0to10V
nC VDD=480V,ID=1.4A,VGS=0to10V
V VDD=480V,ID=1.4A,VGS=0to10V
1)_{Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to480V}
2)_{Co(tr)isafixedcapacitancethatgivesthesamechargingtimeasCosswhileVDSisrisingfrom0to480V}
Final Data Sheet
4
Rev.2.0,2016-04-29