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IPN60R1K5CE Datasheet, PDF (1/13 Pages) Infineon Technologies AG – 600V CoolMOSª CE Power Transistor | |||
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IPN60R1K5CE
MOSFET
600VCoolMOSªCEPowerTransistor
CoolMOSâ¢isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOSâ¢CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
â¢ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
â¢Veryhighcommutationruggedness
â¢Easytouse/drive
â¢Pb-freeplating,Halogenfreemoldcompound
â¢Qualifiedforstandardgradeapplications
Applications
Adapter,ChargerandLighting
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseperatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
1.5
â¦
Qg,typ
9.4
nC
ID,pulse
8.4
A
Eoss@400V
1
µJ
Body diode di/dt
500
A/µs
Type/OrderingCode
IPN60R1K5CE
Package
PG-SOT223
Marking
60S1K5
PG-SOT223
Gate
Pin 1
Drain
Pin 2
Source
Pin 3
RelatedLinks
see Appendix A
Final Data Sheet
1
Rev.2.0,2016-04-29
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