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IPI60R099CP Datasheet, PDF (4/10 Pages) Infineon Technologies AG – CoolMOSTM Power Transistor
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1 Power dissipation
P tot=f(T C)
300
200
100
2 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
102
limited by on-state
resistance
IPI60R099CP
1 µs
10 µs
100 µs
101
1 ms
DC
10 ms
100
0
0
40
80
120
T C [°C]
3 Max. transient thermal impedance
Z thJC=f(t P)
parameter: D=t p/T
100
10-1
160
100
101
102
V DS [V]
4 Typ. output characteristics
I D=f(V DS); T j=25 °C
parameter: V GS
120
20 V
105
103
10 V
8V
0.5
90
75
0.2
10-1
60
0.1
45
0.05
0.02
30
0.01
single pulse
15
10-2
0
10-5
10-4
10-3
10-2
10-1
100
0
t p [s]
Rev. 1.0
page 4
7V
6V
5.5 V
5V
4.5 V
5
10
15
V DS [V]
20
2007-01-25
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