IPI60R099CP Datasheet, PDF (1/10 Pages) Infineon Technologies AG – CoolMOSTM Power Transistor

CoolMOS^TM Power Transistor
Features
• Worldwide best R _ds,on in TO220
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC¹⁾ for target applications
• Pb-free lead plating; RoHS compliant
Product Summary
V _DS @ T_j,max
R _DS(on),max
Q _g,typ
IPI60R099CP
650 V
0.099 Ω
60 nC
PG-TO262
CoolMOS CP is designed for:
• Hard switching SMPS topologies for Server and Telecon
Type
IPI60R099CP
Package
PG-TO262
Marking
6R099
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
T _C=25 °C
Pulsed drain current²⁾
I _D,pulse
T _C=100 °C
T _C=25 °C
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3)
AR
Avalanche
current,
repetitive
t
2),3)
AR
MOSFET dv /dt ruggedness
E _AS
E _AR
I _AR
dv /dt
I _D=11 A, V _DD=50 V
I _D=11 A, V _DD=50 V
V _DS=0...480 V
Gate source voltage
V _GS
static
AC (f >1 Hz)
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
Rev. 1.0
page 1
Value
31
19
93
800
1.2
11
50
±20
±30
255
-55 ... 150
Unit
A
mJ
A
V/ns
V
W
°C
2007-01-25