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IPD170N04NG Datasheet, PDF (4/9 Pages) Infineon Technologies AG – OptiMOS3 Power-Transistor
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1 Power dissipation
P tot=f(T C)
2 Drain current
I D=f(T C); V GS≥10 V
IPD170N04N G
35
35
30
30
25
25
20
20
15
15
10
10
5
5
0
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
103
limited by on-state
resistance
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
10
0.5
102
1 µs
10 µs
0.2
1
0.1
100 µs
101
DC
0.05
0.02
1 ms
0.01
0.1
single pulse
100
10 ms
10-1
10-1
Rev. 1.0
100
101
V DS [V]
102
0.01 0
10-6
0
10-5
0
10-4
0
10-3
0
10-2
0
10-1
1
100
t p [s]
page 4
2007-12-11
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