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IPD170N04NG Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS3 Power-Transistor | |||
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Type
OptiMOS®3 Power-Transistor
Features
⢠Fast switching MOSFET for SMPS
⢠Optimized technology for DC/DC converters
⢠Qualified according to JEDEC1) for target applications
⢠N-channel, normal level
⢠Excellent gate charge x R DS(on) product (FOM)
⢠Very low on-resistance R DS(on)
⢠100% Avalanche tested
⢠Pb-free plating; RoHS compliant
Type
IPD170N04N G
Product Summary
V DS
R DS(on),max
ID
IPD170N04N G
40 V
17 mâ¦
30 A
Package
Marking
PG-TO252-3
170N04N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current2)
Avalanche current, single pulse3)
Avalanche energy, single pulse
Gate source voltage
1) J-STD20 and JESD22
ID
I D,pulse
I AS
E AS
V GS
V GS=10 V, T C=25 °C
V GS=10 V, T C=100 °C
T C=25 °C
T C=25 °C
I D=30 A, R GS=25 â¦
Value
Unit
30
A
23
210
30
5
mJ
±20
V
Rev. 1.0
page 1
2007-12-11
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