English
Language : 

IPB80N06S2L-09 Datasheet, PDF (4/8 Pages) Infineon Technologies AG – OptiMOS Power-Transistor
◁
1 Power dissipation
P tot = f(T C); V GS ≥ 4 V
2 Drain current
I D = f(T C); V GS ≥ 10 V
IPB80N06S2L-09
IPP80N06S2L-09
200
100
180
160
80
140
120
60
100
80
40
60
40
20
20
0
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
I D = f(V DS); T C = 25 °C; D = 0
parameter: t p
1000
4 Max. transient thermal impedance
Z thJC = f(t p)
parameter: D =t p/T
100
0.5
100
1 µs
10 µs
100 µs
1 ms
10-1 0.1
0.05
0.01
10
10-2
1
0.1
Rev. 1.0
1
10
V DS [V]
single pulse
10-3
100
10-7 10-6 10-5 10-4 10-3 10-2 10-1 100
t p [s]
page 4
2006-03-13
 ▷