IPB80N06S2L-09 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – OptiMOS Power-Transistor

OptiMOS^® Power-Transistor
Features
• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
IPB80N06S2L-09
IPP80N06S2L-09
Product Summary
V _DS
R _DS(on),max (SMD version)
I_D
55 V
8.3 mΩ
80 A
PG-TO263-3-2
PG-TO220-3-1
Type
IPB80N06S2L-09
IPP80N06S2L-09
Package
Ordering Code Marking
PG-TO263-3-2 SP0002-18743 2N06L09
PG-TO220-3-1 SP0002-18742 2N06L09
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current¹⁾
I_D
T _C=25 °C, V _GS=10 V
T _C=100 °C,
V _GS=10 V²⁾
Pulsed drain current²⁾
Avalanche energy, single pulse²⁾
Gate source voltage⁴⁾
I _D,pulse
E _AS
V _GS
T _C=25 °C
I _D= 80 A
Power dissipation
P _tot
T _C=25 °C
Operating and storage temperature T _j, T _stg
Value
80
73
320
370
±20
190
-55 ... +175
Unit
A
mJ
V
W
°C
Rev. 1.0
page 1
2006-03-13