English
Language : 

IPB25N06S3L-22_07 Datasheet, PDF (4/9 Pages) Infineon Technologies AG – OptiMOS-T2 Power-Transistor
◁
1 Power dissipation
P tot = f(T C); V GS ≥ 4 V
50
IPB25N06S3L-22
IPI25N06S3L-22, IPP25N06S3L-22
2 Drain current
I D = f(T C); V GS ≥ 4 V
30
40
20
30
20
10
10
0
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
I D = f(V DS); T C = 25 °C; D = 0
parameter: t p
1000
4 Max. transient thermal impedance
Z thJC = f(t p)
parameter: D =t p/T
101
100
10
1
0.1
Rev. 1.1
1 µs
10 µs
100 µs
1 ms
0.1
100
0.05
10-1 0.05
10-2
single pulse
1
10
V DS [V]
10-3
100
10-7 10-6 10-5 10-4 10-3 10-2 10-1 100
t p [s]
page 4
2007-11-07
 ▷