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IPB25N06S3L-22_07 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS-T2 Power-Transistor
OptiMOS®-T2 Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
IPB25N06S3L-22
IPI25N06S3L-22, IPP25N06S3L-22
Product Summary
V DS
R DS(on),max (SMD version)
ID
55 V
21.3 mΩ
25 A
PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1
Type
IPB25N06S3L-22
IPI25N06S3L-22
IPP25N06S3L-22
Package
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Marking
3N06L22
3N06L22
3N06L22
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
ID
T C=25 °C, V GS=10 V
T C=100 °C,
V GS=10 V2)
Pulsed drain current2)
Avalanche energy, single pulse2)
I D,pulse
E AS
T C=25 °C
I D=12.5 A
Avalanche current, single pulse
I AS
Gate source voltage3)
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
Unit
25
A
25
100
120
mJ
25
A
±16
V
50
W
-55 ... +175
°C
55/175/56
Rev. 1.1
page 1
2007-11-07