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IPB075N04LG Datasheet, PDF (4/9 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor
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1 Power dissipation
P tot=f(T C)
60
2 Drain current
I D=f(T C); V GS≥10 V
60
IPB075N04L G
50
50
40
40
30
30
20
20
10
10
0
0
0
50
100
150
200
0
50
100
150
200
T C [°C]
T C [°C]
3 Safe operating area
I D=f(V DS); T C=25 °C; D =0
parameter: t p
103
limited by on-state
resistance
4 Max. transient thermal impedance
Z thJC=f(t p)
parameter: D =t p/T
10
1 µs
102
10 µs
100 µs
DC
101
1 ms
10 ms
100
0.5
1
0.2
0.1
0.05
0.02
0.1
0.01
single pulse
10-1
10-1
Rev. 2.0
100 V DS [V] 101
0.01 0
0
0
0
0
0
1
102
10-6
10-5
10-4
t 1p0[-s3 ]
10-2
10-1
100
page 4
2010-04-23
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