IPB075N04LG Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor

Type
OptiMOS^™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC¹⁾ for target applications
• N-channel, logic level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
• 100% Avalanche tested
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V _DS
R _DS(on),max
I_D
IPB075N04L G
40 V
7.5 mΩ
50 A
PG-TO263-3
Type
IPB075N04L G
Package
PG-TO263-3
Marking
075N04L
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
V _GS=10 V, T _C=25 °C
V _GS=10 V, T _C=100 °C
Pulsed drain current²⁾
Avalanche current, single pulse³⁾
Avalanche energy, single pulse
Gate source voltage
1) _{J-STD20 and JESD22}
V _GS=4.5 V, T _C=25 °C
I _D,pulse
I _AS
E _AS
V _GS
V _GS=4.5 V,
T _C=100 °C
T _C=25 °C
T _C=25 °C
I _D=50 A, R _GS=25 Ω
Rev. 2.0
page 1
Value
Unit
50
A
46
50
40
350
50
20
mJ
±20
V
2010-04-23