IKW50N65H5 Datasheet, PDF (4/17 Pages) Infineon Technologies AG – 650V DuoPack IGBT and Diode High speed switching series fifth generation

IKW50N65H5
Highspeedswitchingseriesfifthgeneration
Maximumratings
Parameter
Collector-emitter voltage
DCcollectorcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire
TC=100°C
Pulsedcollectorcurrent,tplimitedbyTvjmax
TurnoffsafeoperatingareaVCE≤650V,Tvj≤175°C
Diodeforwardcurrent,limitedbyTvjmax
TC=25°Cvaluelimitedbybondwire
TC=100°C
Diodepulsedcurrent,tplimitedbyTvjmax
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010)
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Operating junction temperature
Storage temperature
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
Mounting torque, M3 screw
Maximum of mounting processes: 3
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
Ptot
Tvj
Tstg
M
Value
Unit
650
V
80.0
A
56.0
150.0
A
150.0
A
40.0
A
27.0
150.0
A
±20
±30
V
305.0
145.0
W
-40...+175
°C
-55...+150
°C
260
°C
0.6
Nm
ThermalResistance
Parameter
Characteristic
IGBT thermal resistance,
junction - case
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
Symbol Conditions
Rth(j-c)
Rth(j-c)
Rth(j-a)
Max.Value
Unit
0.50
K/W
1.50
K/W
40
K/W
4
Rev.1.1,2012-11-09