IKW50N65H5 Datasheet, PDF (10/17 Pages) Infineon Technologies AG – 650V DuoPack IGBT and Diode High speed switching series fifth generation

1000
td(off)
tf
td(on)
tr
100
10
IKW50N65H5
Highspeedswitchingseriesfifthgeneration
1000
td(off)
tf
td(on)
tr
100
10
1
5 15 25 35 45 55 65 75 85
rG,GATERESISTOR[Ω]
Figure 9. Typicalswitchingtimesasafunctionofgate
resistor
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,IC=25A,Dynamictestcircuitin
Figure E)
1
25
50
75
100 125 150 175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 10. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=15/0V,
IC=25A,rG=12Ω,Dynamictestcircuitin
Figure E)
6.0
typ.
5.5
min.
max.
5.0
4.5
4.0
12
Eoff
11
Eon
Ets
10
9
8
7
3.5
6
3.0
5
4
2.5
3
2.0
2
1.5
1
1.0
0
25
50
75
100 125 150
Tvj,JUNCTIONTEMPERATURE[°C]
0
0
30
60
90
120
150
IC,COLLECTORCURRENT[A]
Figure 11. Gate-emitterthresholdvoltageasafunction Figure 12. Typicalswitchingenergylossesasa
ofjunctiontemperature
functionofcollectorcurrent
(IC=0.5mA)
(inductiveload,Tvj=150°C,VCE=400V,
VGE=15/0V,rG=12Ω,Dynamictestcircuitin
Figure E)
10
Rev.1.1,2012-11-09