IDB09E120_07 Datasheet, PDF (4/8 Pages) Infineon Technologies AG – Fast Switching EmCon Diode

1 Power dissipation
P_tot = f (T_C)
parameter: Tj ≤ 150 °C
70
W
50
40
2 Diode forward current
I_F = f(T_C)
parameter: T_j≤ 150°C
25
IDB09E120
A
15
30
10
20
5
10
0
25
50
75
100
°C
150
T_C
3 Typ. diode forward current
I_F = f (V_F)
0
25
50
75
100
°C
150
T_C
4 Typ. diode forward voltage
V_F = f (T_j)
27
A
-55°C
25°C
21
100°C
150°C
18
15
12
9
6
3
2.6
V
18A
2.2
2
9A
1.8
1.6
4,5A
1.4
0
0
0.5
1
1.5
2
V
3
V_F
1.2
-60
-20
20
60
100 _°C 160
T_j
Rev.2.2
Page 4
2007-09-01